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If the Fermi energy of a Si sample is uniformly 0.2 eV below the conduction band, 
calculate: (i) the electron and hole densities, and (ii) Doping concentration. Assume the Si 
bandgap is 1.12 eV, the temperature is 300 K, and the effective density of states in the 
conduction band is 2.86 x 1019 cm-3.

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