Working on my fermi level project. Interested in determining theintrinsic carrier concentration of gallium nitride (GaN).
T=300; % Temperature in Kelvin
k=8.617e-5; % Boltzmann constant (eV/K)
e0=8.85e-14; % permittivity of free space (F/cm)
q=1.602e-19; % charge on an electron (coul)
KS=8.9; % Dielectric constant of GaN
ni=X; % intrinsic carrier conc. in Galium Nitride at 300K
EG=3.44 ; % Galium Nitride band gap (eV)
Could you show steps on how you calculated X?
Honestly, just give me a value and show me how you got there. Cutthe gibberish.
Its couple hours before sunrise.
Intrinsic carrier concentration:
ni = (Nc·Nv)^(1/2)*exp(-Eg/(2kBT))
Effective density of states in the conduction band: Nc
Zinc Blende
Nc = 2.3*(1e14)*T^(3/2) (cm-3)
Effective density of states in the valence band: Nv
Zinc Blende BN
Nv = 8.0*(1e15)*T^(3/2) (cm-3)
Helpful Source: http://www.ioffe.ru/SVA/NSM/Semicond
Working on my fermi level project. Interested in determining theintrinsic carrier concentration of gallium nitride (GaN).
T=300; % Temperature in Kelvin
k=8.617e-5; % Boltzmann constant (eV/K)
e0=8.85e-14; % permittivity of free space (F/cm)
q=1.602e-19; % charge on an electron (coul)
KS=8.9; % Dielectric constant of GaN
ni=X; % intrinsic carrier conc. in Galium Nitride at 300K
EG=3.44 ; % Galium Nitride band gap (eV)
Could you show steps on how you calculated X?
Honestly, just give me a value and show me how you got there. Cutthe gibberish.
Its couple hours before sunrise.
Intrinsic carrier concentration:
ni = (Nc·Nv)^(1/2)*exp(-Eg/(2kBT))
Effective density of states in the conduction band: Nc
Zinc Blende
Nc = 2.3*(1e14)*T^(3/2) (cm-3)
Effective density of states in the valence band: Nv
Zinc Blende BN
Nv = 8.0*(1e15)*T^(3/2) (cm-3)
Helpful Source: http://www.ioffe.ru/SVA/NSM/Semicond
