EL ENG 143 Study Guide - Final Guide: Microfabrication, Permittivity, Photomask
Document Summary
Three 8 112" x 11" sheet of notes, and scientific. Boltzmann"s constant, k = 1. 38 x 10-23 j/k. Permittivity of free space, eo = 8. 85 x 10-12 flm. Permeability offree space, )to = 1. 26 x 10-6 him. Speed of light in vacuum, c = 2. 998 x 108 mls. Electron charge, e = 1. 6 x 10-19 c. Free electron mass, m, = 9. 1 x 10-31 kg. Electron volt, 1 ev = 1. 6 x 10-19 j. Thermal voltage, kt/q = 0. 0258 v (at 300k) Relative dielectric constant of silicon, k, = 11. 8. Relative dielectric constant of silicon dioxide, k, = 3. 9. Electrons: m,* = 1. 18 m, ; holes: m, * = 0. 81 m, Silicon band gap at 300k, eg= 1. 12 ev. Intrinsic carrier concentration in si (at 300k), n, = 1010 ern" Ideal gas constant, r = 8. 315 j mol" k"i ; 0. 082 l atm rnol" k-i. 7: true or false. (30points total, 2 points for each question)
