EL ENG 143 Study Guide - Midterm Guide: Relative Permittivity, Silicon Dioxide, Electronvolt
Document Summary
One 8 112" x 11" sheet of notes, and scientific pocket. Make sure the exam paper has 10 pages. Fundamental constants you might need: constant, k = 1. 38 x 10-23j/k. Permittivity of free space, eo = 8. 85 x 10-12flm. Speed of light in vacuum, c = 2. 998 x 108 mls. Electron volt, 1 ev = 1. 6 x 10-19j. Thermal voltage, kt/q = 0. 0258 v (at 300k) Relative dielectric constant of silicon, k, = 11. 8 i. Relative dielectric constant of silicon dioxide, k, = 3. 9. Electrons: m; * = 1. 18 roo ; holes: mp* = 0. 81 roo. Silicon band gap at 300k, eg= 1. 12 ev. Silicon intrinsic carrier concentration at 300k, n. = 1010em" 1: thermal oxidation (25 points, the following structure is subjected to a steam oxidation step at 1000 c for 3 hours. Sketch a roughly proportional cross-section after this oxidation step in the same figure.
