If the Fermi energy of a silicon sample is uniformly 0.2 eV below the conduction band,calculate:a. Electron and hole densitiesb. Doping concentrationAssume the bandgap is 1.12 eV, at room temperature and the effective density of states, Nc, is2.86 x 1019 cm-3 and intrinsic carrier concentration is 9.65 x 109 cm-3.
