ME 2733 Chapter : Energy Bands
Document Summary
Electron and hole migration: concept of electrons and holes: hole valence electron. Si atom electron pair creation electron pair migration hole no applied electric field applied electric field: electrical conductivity given by: Intrinsic conductivity: for intrinsic semiconductor n = p = ni. - # electrons = # holes (n = p: extrinsic: - electrical behavior is determined by presence of impurities that introduce excess electrons or holes. - n and p depend on the donor and acceptor concentration nd and na, and the temperature t: n-type extrinsic: (n >> p, p-type extrinsic: (p >> n) donor. Callister & rethwisch 9e. no applied electric field hole conduction electron valence electron. 4+ no applied electric field acceptor hep . At room temperature, carrier concentration n = donor concentration. At room temperature, carrier concentration p = acceptor concentration. According to the mobility vs. impurity concentration curves, mobility. E = 0. 07 m2/v s when n = 1023 m-3.
