EL ENG 16B Study Guide - Midterm Guide: Pmos Logic, Internal Resistance, Frequency Response
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Instructions: you have 120 minutes to complete this exam. If needed, cross out any work you do not want to be graded. The performance of most machine learning applications is dominated by memory accesses, and hence many researchers are developing new types of memories that attempt to address this issue. In this problem, we will analyze a circuit that is relevant to an emerging type of memory known as r-ram (resistive ram). R-ram cells store information in the value of their internal resistance. For this problem, we will look at an. For the rest of this problem, consider the circuit (which is associated with reading out an r-ram cell) shown below: We will rst draw the pull-down network composed of nmos transistors. Recall that the and oper- ator corresponds to series transistors in the pull-down network. row. Then, we will add the pull-up network composed of pmos transistors. All of the series transitors above turn into parallel transistors.
