EL ENG 16B Midterm: ee16B-fa2018-mt1-Alon_Lustig-exam
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Instructions: you have 120 minutes to complete this exam. If needed, cross out any work you do not want to be graded. The performance of most machine learning applications is dominated by memory accesses, and hence many researchers are developing new types of memories that attempt to address this issue. In this problem, we will analyze a circuit that is relevant to an emerging type of memory known as r-ram (resistive ram). R-ram cells store information in the value of their internal resistance. For this problem, we will look at an. For the rest of this problem, consider the circuit (which is associated with reading out an r-ram cell) shown below: Now consider the case where row = pre = vdd and the circuit is in steady state. Note that throughout this problem, you can assume that the transistors are ideal i. e. , that their ron =
