EE 2230 Chapter : Chapter 5
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2: its appearance as the thermal voltage kt/q in. All electronic devices are sensitive to changes in temperature. This dependency may cause significant shifts in device v-i characteristics or variations in device parameters. Many causes of temperature dependency in semiconductor devices are ultimately related to two factors: The temperature increase of thermally generated hole-electron pairs in a semiconductor to increase, resulting in a change in carrier concentration in both p-type and n-type materials. For the same applied voltage across a forward-biased pn junction, changes in carrier concentration lead to an increase in the number of injected carriers per unit voltage. An increase in temperature also leads to different carrier recombination rates and carrier mobilities in bulk materials in mosfets and jfets. the v-i equations of many semiconductor devices. The thermal voltage affects the expressions that describe the injection of carriers across a pn junction and the width of a reverse-biased depletion-region. 5. 6. 1: temperature dependence of the mosfet and jfet.
